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现货供应 MOS管2SK3018

2.5V Drive Nch MOS FET2SK3018zStructureSilicon N-channelMOSFETzApplicationsInterfacing, switching (30V, 100mA)zFeatures1) Low on-resistance.2) Fast switching speed.3) Low voltage drive (2.5V) make... ...

价格:电议
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现货供应 P沟道场效应管FDN338P

FDN338P P-Channel Logic Level Enhancement Mode Field Effe TransistorGeneral DcriptionSOT -3 P-Channel logic level enhancement mode power field effe transistors are produced using Fairch... ...

价格:电议
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现货供应 场效应管AO3414

现货供应 场效应管AO3414FET 型MOSFET N 通道,金属氧化物FET 特点逻辑电平门开态Rds()@ Id, Vgs @ 25° C50 毫欧 @ 4.2A, 4.5V漏源电压(Vdss)20VId 时的 Vgs(th)()1V @ 250µA闸... ...

价格:电议
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现货供应 开关三管2N4401

现货供应 开关三管2N4401Dated : 02/12/2005SEMTECH ELERONICS LTD.(Subsidiary of Sino-Tech International Holdings Limited, a companylisted on the Hong Kong Stock Exchange, Stock Code: 724)&re... ...

价格:电议
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现货供应 通用晶体管MTA42LT1G

VendorON Semiconduor (VA)CategoryDiscrete Semiconduor ProdusTransistor TeNPNVoltage - Colleor Emitter Breakdown (Max)300VCurrent - Colleor (Ic) (Max)50mAPower - Max225mWDC Current Gain... ...

价格:电议
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现货供应 三管2772

现货供应 三管2772PNP SILICON POWER TRANSISTOR2772PNP SILICON POWER TRANSISTORDATA SHEETDocument . D17118EJ2V0DS00 (2nd edition)(Previous . TC-3569)Date Published March 2004 N CP(K)Pr... ...

价格:电议
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现货供应 三管2SA1213

现货供应 三管2SA1213TOSHIBA Transistor Silicon PNP Epitaxial Te (P process)2SA121ower Amplifier ApplicationsPower Switching Applications• Low saturation voltage: VCE (sat) = &minu... ...

价格:电议
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现货供应 三管KTA1663

现货供应 三管KTA1663SEMICONDUORTECHNICAL DATAKTA1663EPITAXIAL PLANAR PNP TRANSISTORRevision No : 3HIGH CURRENT APPLICATION.FEATUR·1W (Mounted on Ceramic Substrate).·Small F... ...

价格:电议
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现货供应 开关三管2N4403

现货供应 开关三管2N44032N440referred DeviceGeneral PurposeTransistorsPNP SiliconFeatures• Pb−Free Packages are Available*MAXIMUM RATINGSRating Symbol Value UnitColleor −... ...

价格:电议
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现货供应 开关三管PXT8550D

现货供应 开关二管PXT8550D 创立于2005年的东莞市讯微电子有限公司,自创立始就面向电子产品生产工厂提供配套电子元件的销售、服务,帮助企业解决技术层面问题,取得国内外电子器件工厂代理权。 公司主... ...

价格:电议
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现货供应 开关三管PXT8050D

现货供应 开关三管PXT8050DJIANGSU CHANGJIANG ELERONICS TECHLOGY CO., LTDSOT-89 Plastic-Encapsulate TransistorsPXT8050 TRANSISTOR (NPN)FEATURz Compliment to PXT8550MARKING: Y1MAXIMUM RAT... ...

价格:电议
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原装现货供应长电三管M8050 Y11

0.625 W(Tamb=25℃)Colleor currentICM : 1 AColleor-base voltageV(BR)CBO : 40 VOperating and storage junion temperature rangeTJ,Tstg: -55℃ to +150℃ELERICAL CHARAERISTICS(Tamb=25℃ un... ...

价格:电议
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现货供应 高频三管2SC3356

DATA SHEETSILICON TRANSISTOR2SC3356MICROWE LOW ISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTORDocument . P10356EJ5V1DS00 (5th edition)Date Published March 1997 NPrinted in Japan1985?DCRIPTIO... ...

价格:电议
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现货供应 晶体管BC857A

现货供应 晶体管BC857ABC857ABC857BBC857CDiscrete POWER & SignalTechlogiPNP General Purpose AmplifierThis device is digned for general purpose amplifier applicationsat collector curren... ...

价格:电议
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现货供应 肖特基二管LL60P

现货供应 肖特基二管LL60Schottky Barrier DiodesMINI-MELF Outline Dimensions*Silicon Epitaxial Planner Diode*Low Reverse Current and Low Forward Voltage*Low Current Rectification and High Spee... ...

价格:电议
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现货供应 触发二管 TMMDB3

ST触发二管 TMMDB3FEATURFunctioning as a trigger diode with a fixed voltagereference, the TMMDB3 can be used in conjunctionwith triacs for simplified gate control circuitsor as a starting eleme... ...

价格:电议
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现货供应 开关二管B

现货供应 开关二管BHigh-speed double diode BFEATUR· all plastic D package· High switching speed: max. 4 ns· Continuous reverse voltage:max. 75 V· Rep... ...

价格:电议
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现货供应 开关二管MD914LT1G

现货供应 开关二管MD914LT1GMD914LT1/DMD914LT1Preferred DeviceHigh−Speed SwitchingDiodeFeatures• Pb−Free Package is AvailableMAXIMUM RATINGSRating Syol Value UnitR... ...

价格:电议
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现货供应 二管1SS226

1SS-11-01TOSHIBA Diode Silicon Epitaxial Planar Te1SS226Ultra High Speed Switching Applicationz Small package : SC-59z Low forward voltage : VF (3) = 0.9V (t.)z Fast reverse recovery ... ...

价格:电议
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现货供应 二管1SS187

1SS-11-01TOSHIBA Diode Silicon Epitaxial Planar Te1SS187Ultra High Speed Switching Applicationz Small package : SC-59z Low forward voltage : VF (3) = 0.92V (t.)z Fast reverse recovery... ...

价格:电议
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